Semiconductor amplitude modulation system



Jul 7, 1953 L. L. Kohbs 2,644,925

SEMICONDUCTOR AMPLITUDE MODULATION svs'rsu wit ER MW: 800/7616 I-f iled Dec. 29, 950

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AAAAAAAA I l, 4 T f5 56 Y 44 v INVENTOR Lesha L.Knrns ATTORNEY Fatentecl July 7, 1953 i SEMICONDUCTOR AMPLITUDE .MODULATION SYSTEM "Leslie L. Koros, Camden, N. J assignor to Radio Corporation ware of America, a corporation of Dela- :Applicatioh December 29, 1950, Serial N 0. 203,398

' 4 Claims. (01. 332-31) This invention relates generally to amplitude modulation systems, and .particularly relates to a semi-conductor amplifier circuit arranged to modulate the amp-litudeof a carrier wave.

A semi-conductor amplifier circuit may be utilized for modulating the amplitude of acarrier wave. To this end, the carrier wave may be impressed between the emitter and base electrodes of a semi-conductor amplifier or transistor. ,The modulation signal may be impressed between the collector and base electrodes of the amplifier circuit. Accordingly, the amplitude of the carrier wave derived between the collector and base electrodes will be modulated in accordance with the modulation signal. I

However, it has been found that. in such an amplitude modulation system utilizinga transistor the amplitude modulated carrier wave derived from the output circuit is also phase modulated. This phase modulation represents distortion which is undesired, This phase distortion of the output wave is caused by a leakage current between the input and output electrodes of the transistor, that is, essentially betweenthe emitter and collector electrodes. Accordingly, a portion of the carrier, wave which is the exciti-ng energy leaks over into the output circuit and the phase of this leakage current may be different from the phase of the amplified output wave. The result is that the amplified and amplitude modulated output wave has a certain amount of phase distortion.

It is believed that this phase distortion is caused by the internal impedance of the transistor. This internal-impedance, which appears between the electrodes of the transistor, produces a leakage current in the collector circuit which may have any phase relationship with the amplified output wave.

It is accordingly the principal object of the present invention to provide an improved amplitude modulation system including a semi-conductor amplifier which will substantially eliminate undesired phase modulation of the outputwave.

A further object of the invention is to provide a transistor amplifier circuit arranged to modulate the amplitude of carrier Wavev wherein means are provided to compensate fortransistor leak-- age current which may cause undesired phase modulation of the amplitudermodulated output wave.

An amplitude modulation system in, accordance with the present invention comprises. a semi-conductor device such as a transistor. The device includesa semi-conductingbody. A base electrode, an emitter electrode and a collector elecr of the amplified carrier wave.

trode are provided in contact with the body. The carrier Wave to be modulated is impressed between the emitter and base electrodes. The modulation signal is applied between the collector and base electrodes. A load impedance element such as a utilization circuit is coupled effectively between the collector and the base, and an amplified carrier wave, which is amplitude modulated in accordance with the modulation signal, is derived from the load impedance element as pointed out hereinabove. I

The semi-conductor device inherently has leakage current between emitter and collector "which will produce an undesired phase modulation In accordance with the present invention circuit means are coupled to the collector electrode for substantially eliminating the undesired phase modulation of the amplified carrier wave.

This may be effected, for example, by providing a network coupled effectively between collector and base and designed to pass a predetermined harmonic of the carrier Wave with the modulation side bands of the harmonic while rejecting the fundamental of the carrier Wave with its modulation side bands if any. This network accordingly may be a high pass filter arranged to reject the fundamental of the carrier wave or it may be a band pass filter which will pass only a predetermined harmonic of the carrier wave with the modulation side bands of the harmonic.

Alternatively, a compensating network may be connected between the emitter electrode and a point on a resonant output circuit tuned to the carrier frequency, that is, to the frequency of the input ,wave. This compensating network is designed and arranged to cancel substantiallythe undesired leakage current.

Still another amplitude modulation system which will compensate for the undesired phase distortion inherentin a transistor has been disclosed and claimed in the copending application to L. L. Koros entitled Transistor Amplitude Modulator, Serial No. 203,397, and filed concurrently herewith, now Patent No. 2,629,858, issued February24, 1953.

The novel features that are considered characteristic of this invention are set forth with particularity in the appended claims. The invention itself, however, both as to its organization and method of operation, as well as additional objects and advantages thereof, will best be understood from the following description when read in connection with the accompanying drawing, in whichi Figure 1 is a circuit diagram of an amplitude 3 modulation system embodying the present invention and from which an amplitude modulated output wave is obtained at a harmonic of the carrier wave impressed thereon having substantially no undesired phase modulation;

Figure 2 is a vector diagram which will be referred to in explaining the phase modulation of the carrier due to the leakage current;

Figure 3 is a circuit diagram of an amplitude modulation system modified in accordance with the invention wherein a compensating network. is provided to cancel or compensate for the undesired leakage current; and

Figures 4 to 6 are circuit diagrams of phase shifting networks which may be used in accordance with the invention in the circuit of Figure 3.

Referring now to the drawing, in which like components have been designated by the same reference numerals throughout the figures, and particularly to Figure 1, there is illustrated an amplitude modulation system comprising a semiconductor device I0. Semi-conductor device In includes a semi-conducting body II which may, for example, consist of silicon or preferably of germanium. The semi-conducting body II is prepared in a conventional manner well known in the art. A base electrode I2, an emitter electrode I3 and a collector electrode I4 are in contact with body II. Base electrode I2 is in low-resistance contact with the body II and may be a largearea electrode as indicated. Emitter electrode I3 and collector electrode I4 are in rectifying contact with the body II; they may be point elec trodes as indicated or they may be in line contact with body II or even in large-area contact provided they form rectifying contacts with the body.

Operating potentials are applied to the electrodes I2 to I4. As is well known a potential in the reverse direction is applied between collector I4 and base I2. Furthermore, a potential in the forward direction is applied between emitter I3 and base I2. If semi-conducting body II is of the N type, the collector I4 should be negative and the emitter I3 positive with respect to the base I2. If body II should be of the P type the potentials must be reversed. It will be assumed for the following discussion that body I I' is of the N type.

Accordingly, base electrode l2 may be grounded as shown and a source of potential such as battery I5 may have its positive terminalgrounded, while its negative terminal is connected through inductor I6 and a parallel resonant circuit IT to collector I4. The emitter electrode may be biased by a suitable battery. However, it is also feasible as shown in Figure 1 to provide instead the bias network I8 including resistor 23 and capacitor 2I connected across the resistor. The capacitor 2 I, however, may be omitted in some cases One terminal of bias network I8 is grounded while its other terminal is connected through choke coil 22 to emitter electrode I3.

A source of a carrier wave is indicated at 4. Source 24 excites the emitter I3. The carrier wave may have any frequency provided it is higher than the highest frequency of the modulation signal. Furthermore, the carrier wave developed by source 24 may be a sinusoidal wave or a Wave of any other suitable shape. One terminal of carrier wave source 24 is coupled to emitter electrode I3 by a coupling capacitor 25. The other terminal of the carrier wave source 24 is connected to the junction point between choke coil 22 and bias network I8.

A source of a modulation signal is indica at 26. The modulation signal may, for exampl be an audio signal or a video signal or any other type of signal with which it is desired to modulate the carrier wave. Modulation signal source 26 is connected across inductor l6, which may be provided with a core as indicated, provided the modulation signal is an audio signal. Battery I5 may be bypassed by capacitor 21 to bypass the modulation signal currents. Capacitor 28 is connected between the junction point of inductor I6 and resonant circuit I1, on the one hand, and ground, on the other hand. Capacitor 28 functions as a carrier frequency bypass capacitor. Accordingly, the lower terminal of inductor I6 is bypassed to ground for modulation signal currents, while its upper terminal is bypassed to ground for carried frequency currents.

A network generally indicated at 30 is coupled between collector I4 and the upper terminal of inductor I6. Network 30 as illustrated is a tripl tuned pi network including parallel resonant circuit I1, another parallel resonant circuit 3| and series resonant circuit 32. Series resonant circuit 32 is connected between the two parallel resonant circuits I1 and 3 I. The pi network 30 may be arranged as a band pass filter which will pass, for example, the second harmonic of the carrier wave with the side bands of the second harmonic and which will reject the fundamental of the carrier wave and its side bands. Actually all that is necessary is a high pass filter which will reject the fundamental of the carrier wave with its side bands. It is to be understood that network 30 may be replaced by any other suitable high pass or band pass filter network which will either reject the fundamental of the carrier wave with its side bands or which will pass only a predetermined harmonic of the carrier wave with the harmonic side bands.

A load impedance element such as a resistor 33 may be connected across the pi network 32. Accordingly, load resistor 33 is coupled effectively between collector I4 and base I2. The load resistor 33 represents a utilization network which may, for example, be the input circuit of the next amplifier stage. The output wave is derived from output terminals 34 connected across load resistor 33. If the modulation side bands of the selected harmonic have a small frequency range compared to the frequency of the harmonic, it 1s also feasible to replace the pi network 30 by a single tuned circuit having a high Q.

The operation of the amplitude modulation system of Figure 1 will now be explained. The carrier wave developed by source 24 is effectively impressed on the emitter electrode I3 since the base electrode I2 is grounded. Choke coil 22 prevents grounding of the impressed carrier wave. As is well known emitter I3 in combination with base I2 function as a peak rectifier for the impressed carrier wave. The thus rectified current flows through choke coil 22 and resistor 20 thereby to build up a charge across capacitor 2|. The thus developed potential is the bias potential for the emitter electrode which will be positive with respect to ground or gas electrode I2. Preferably the bias potential developed by network I8 is of such a magnitude as to provide for class C operation of the device ID.

The circuit of Figure 1 functions as an amplifier circuit so that an amplified version of the impressed carrier wave appears at the load impedance element 33. The collector voltage developed by battery I5 is now modulated by the modulation signal developed by source"! 6 f-Accordingly the amplitude of the output wavewhich appears I with the modulation signal."

across loadresistor 33 is modulated {in accordance As explained he'reinbefore, aleakage rent is inherently present in the device I whicli 'flows essentially between emitter l3 and collector [4. This leakage current may be outb f phas'ewith the amplified output wave thereby to produce phase modulation. 'The' effect of this leakage current may be more'readily understood-byreference to the vector diagram-of Figure 2.- The voltage vector AB in Figure "2 represents the unmodulated output'carrier wave which is developed at the load impedance'element 33. The

voltage vector BC is the vector sum of the two rotating side bands which -are -11)rodu :ed by the amplitude modulation during pe'ak -modulation of the carrier wave-.- Consequently, for 100 per cent modulation vector, equals vector BC. The vector AD represents the leakage voltage which may. form an angle a .withthe output vector AC as explained previously. The vectorv sum AE represents the output carrier wave voltage if no modulation is present. .If the; leakage vector AD is added to the 'modulatedcaiiriejr wave vector AC, the peak envelope volta'g' shown by the vector AF. It'will' be seen that an angle 'm is formed between the vectors AE and AF. This angle m is a function of the modulation signal. wave which is produced by a combination of the vector AC and AD has a phase modulation, the angle m of which varies during the modulation cycle.

In accordance with the present invention, this undesired phase modulation is substantially eliminated by the provision of pi network 30 which will reject the carrier wave. The vector AD is of the same frequency as produced by source 24, therefore it is also rejected. Only the second harmonic of the carrier wave or another predetermined harmonic of the carrier wave with its modulation components is passed by the network so thereby the undesired phase modulation, due to the vector AD, is eliminated.

The undesired phase modulation of the out- Accordingly, the output carrier day an -tr; the' compensating -network 42 a pre'determined' portion of the excite'r voltageythat;

is,- oi "the carrier-wa ve voltage -is in'apressed through tap between colleetor l 4 an 'as'e I2."-By the-"transformer""action of induct 31 a: portion of the carrierwave. applied fo' tap45 is impressed 'on theload resistor 33z By-properly adjusting capacitor '46, inductor 42 I and the positi'on' of tap-45 the amplitude-and phase of the wave applied to load resistor 33 may be con' trolled so that -.the -undesired leakage: current may i be substantially eliminated or -cancelled. The phase of the impressed carrier wavezsmay be adjusted by means of the capacitor .346 and inductor 41. Consequently, the amplitude modulated carrier wave obtained from output: ter-: minals 34 -will lationu It is feasible to substitute other phase-shifts ing networks forv the compensating. netwo'rkA-Z of Figure 3. Other 'suitablephaseshifting networks have-l been illustrated inlFigurese to' 6.

'that is, between emitter l3 and variable-tap 45. The two terminals 'of' inductor 5|:are by passed to ground by capacitor.53 and- 54 respectively. The voltage and phase'of the current injected into variable tap 45 may be adjusted by resistor 50. Inductor 5|, of course, may also be adjusted.

put wave may also be eliminated in accordance I with the present invention by means of the circuit of Figure 3 to which reference is now made. The input circuit of the amplitude modulator of Figure 3 may be identical with that of Figure l, as illustrated. The input terminals 24 schematically indicate the carrier wave source. The modulation signal source schematically indicated by input terminals 26 may also be connected between collector l4 and base l2 in the manner previously explained in connection with Figure 1.

However, in the circuit of Figure 3a resonant output circuit 36 is connected between collector I4 and inductor I6. Resonant circuit 36 includes inductor 3i and capacitor 38 and is pref-.

Figure 3 illus- I Figure 5 illustrates an RC network which may be substituted, in some cases, for the compensating network 42 in Figure 3. A pair of resistors 55 and 56 and a blocking capacitor 51 are connected in series between leads 43 and 44. The

terminals of resistor 56 are bypassed to ground Another RC network which may be substituted for the compensating network 42 is shown in Figure 6. Capacitors 6|, 62, and 63 are serially connected between the leads 43, 44.

phase modulation which is produced by the leakage current existing between the emitter and collector electrodes of a transistor. The phase modulation may either be eliminated by providing a high pass filter or a band pas filter in the output circuit which rejects the fundamental of the carrier wave'and its modulation side bands. work may be coupled between emitter and collector electrodes for compensating for the undesired leakage current. a

What is claimed is:

1. An amplitude modulator comprising a semiconductor device including a semi-conducting body, a base electrode, an emitter electrode and a. collector electrode in contact with said body, means applying a potential in the reverse dihave substantially .nophase modu- The two junction points of capacitors BI, 62 and 62, 63 l are connected to ground through resistor 64 1 3 and 65 respectively. The phase .of the current may again be adjusted by means of capacitors It is, of course, to

The amplitude modulator Alternatively, a compensating netfectioli between said collector and base electrode, means for applying a potential in the forward direction between said emitter and base elec trodes of a magnitude to provide for class C operation, a. carrier wave source coupled between said emitter and base electrodes, a modulation signal source coupled between said collector and base electrodes, a high pass network coupled between said collector and base electrodes for passing the second harmonic of said carrier wave with its modulation side bands and for rejecting the fundamental of said carrier wave with its modulation side bands, and a load impedance element coupled to said network.

2. A modulator as defined in claim 1 wherein said high pass network consists of a pi network.

3. A modulator as defined in claim 1 wherein said network consists of a pi network providing a band pass filter and including at least one parallel resonant circuit.

4. An amplitude modulation system comprising a semi-conductor, device including a semiconducting body, a base electrode, an emitter electrode and a collector electrode in contact with said body, means for applying operating potentials to said electrodes, a carrier-wave source coupled between said emitter and base electrodes for applying the carrier wave thereto,

a source of a modulation signal coupled between said collector and base electrodes for applying the modulation signal thereto, a load impedance element coupled effectively between said collector and base electrodes for deriving therefrom an amplified carrier wave amplitude modulated in accordance with said modulation signal, said semi-conductor device having inherently a. leakage' current between said emitter and collector electrodes which tends to produce an undesired phase modulation of said amplitude modulated carrier wave, circuit means comprising a network coupled effectively between said collector and base electrodes and for passing a predetermined harmonic of said carrier wave with the modulation side bands of said harmonic and to reject the fundamental of said carrier wave with its modulation side bands.

LESLIE L. KOROS.

' References Cited in the file of this patent UNITED STATES PATENTS Number Name Date 2,298,930 Decino Oct. 13, 1942 2,436,066 Favre Feb. 17, 1948 2,476,323 Rack July 19, 1949 2,486,776 Barney Nov. 1, 1949 

